Investigation of SiC and C Nanostructures Obtained by MWCVD

  • B. Z. Mansurov Center of Innovative Technologies at the Institute of Combustion Problems, 050050, Polezhaeva st., 20, Almaty, Kazakhstan
  • A. K. Kenzhegulov Center of Innovative Technologies at the Institute of Combustion Problems, 050050, Polezhaeva st., 20, Almaty, Kazakhstan
  • B. S. Medyanova Center of Innovative Technologies at the Institute of Combustion Problems, 050050, Polezhaeva st., 20, Almaty, Kazakhstan; al-Farabi Kazakh National University, 050040, al-Farabi ave., 71, Аlmaty, Kazakhstan
  • G. Partizan Center of Innovative Technologies at the Institute of Combustion Problems, 050050, Polezhaeva st., 20, Almaty, Kazakhstan; al-Farabi Kazakh National University, 050040, al-Farabi ave., 71, Аlmaty, Kazakhstan
  • G. S. Suyundykova Center of Innovative Technologies at the Institute of Combustion Problems, Polezhaeva st., 20, Almaty, Kazakhstan; Al-Farabi Kazakh National University, al-Farabi ave., 71, Аlmaty, Kazakhstan
  • B. Zhumadilov Center of Innovative Technologies at the Institute of Combustion Problems, Polezhaeva st., 20, Almaty, Kazakhstan; Al-Farabi Kazakh National University, al-Farabi ave., 71, Аlmaty, Kazakhstan
  • M.E. Mansurova Al-Farabi Kazakh National University, al-Farabi ave., 71, Аlmaty, Kazakhstan
  • U. P. Koztayeva Institute of Nuclear Physics, Ibragimova st., 1, Almaty, Kazakhstan
  • B. A. Aliyev al-Farabi Kazakh National University, 71 al-Farabi ave., Almaty, Kazakhstan
Keywords: silicon carbide and carbon, nanostructures, chemical deposition from the gas phase, microwave plasma, porous silicon, method of scanning electron microscopy, Raman scattering

Abstract

The results of experiments on the synthesis of SiC and C nanostructures by chemical vapor deposition in microwave plasma are presented in this article. The single crystal silicon plates with orientations [100] and [111] which previously passed chemical purification were used as substrates. Also, the substrates of porous silicon were prepared in order to activate the surface during the synthesis. The synthesis temperature ranged from 700 to 900 °C in steps of 100 °C. The pressure in the chamber was changed depending on the power of the plasma. Studies by scanning electron microscopy (SEM) showed that formed nanostructures have a diameter of 200‒350 nm and a rough surface. The formation of nanostructures on the polished Si occurs on the SiC buffer layer. Analysis of SEM images of the samples shows that growth of NS on the surface of porous silicon is more widespread in contrast to the polished Si. The results of X-Ray spectral microanalysis showed that the carbon content in samples of nanostructures on polished Si varies from 10 to 20% and remains constant on porous silicon ~ 25%. The results of studies by Raman scattering confirmed that SiC film with structure of 3C-SiC is formed on the polished Si. Besides, the presence of main carbon peaks on both types of substrates in the range of 1338.2 and 1583 cm‒1 should be noted, which correspond to the carbon nanostructures.

 

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Published
2017-06-30
How to Cite
[1]
B. Mansurov, “Investigation of SiC and C Nanostructures Obtained by MWCVD”, Eurasian Chem. Tech. J., vol. 19, no. 2, pp. 165-175, Jun. 2017.
Section
Articles

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