Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD

Authors

  • R. E. Beisenov Center for Advanced Materials, University of Houston, Houston, Texas, USA
  • R. Ebrahim Center for Advanced Materials, University of Houston, Houston, Texas, USA
  • Z. A. Mansurov The Institute of Combustion Problems, Almaty. Kazakhstan
  • S. Th. Tokmoldin Institute for Physics and Technology, Almaty, Kazakhstan
  • B. Z. Mansurov The Institute of Combustion Problems, Almaty. Kazakhstan
  • A. Ignatiev Center for Advanced Materials, University of Houston, Houston, Texas, USA

DOI:

https://doi.org/10.18321/ectj136

Abstract

Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same molecule, without any carrier or bubbler gas. Atomic structure, surface composition and morphology have been investigated by XRD, AES, SEM and AFM analysis. SiC films of 5-7 micron thickness were grown at a rate of ~ 40 nm/min on sapphire (0001) and Si (111) substrates. The films grown at low temperature (850 ºC and 900 ºC) on both substrates show crystalline 3C-SiC in the (111) orientation. XRD results show that the orientation of the crystal structure does not depend of the substrate orientation AFM pictures of SiC films grown on sapphire (0001) exhibit more crystalline order as compared to films grown on the Si (111) substrates. AES of the grown films shows that in both cases the Si peak intensity is greater than that of carbon. This work shows promise for the development of alternative processes for developing low cost, large area substrates for application to IIInitrides LED and UV photodetector fabrication and also for gas detector application.

References

1. H. Abderrazak and E. Selmane B.H. Hmida. Silicon Carbide: Synthesis and Properties, Properties and Applications of Silicon Carbide, edited by Prof. Rosario Gerhardt, pp. 361-388.

2. Masri P. Silicon carbide and silicon carbidebased structures, the physics of epitaxy. Surface Science Reports 48 (2002), pp. 1-51.

3. J.A. Cooper, Jr. Silicon Carbide, edited by W. J. Choyke H. Matsunami, and G. Pensl (Akademie, Berlin, 1997), Vol. II, p. 305.

4. Matsunami H. Progress in epitaxial growth of SiC and its electronic devices. J. of the Korean physical society, Vol. 30, pp. S186 - S190.

5. Park K.S., Kimoto T., Matsunami H. High quantum-efficiency 4H-SiC UV photodiode. J. of the Korean physical society. 1997, Vol. 30, Issue 1, pp. 123-130.

6. B. Luchinin, Yu. Tairov. Silicon Carbide - Diamond-like material. NANOINDUSTRY 2010, Issue 1, pp. 36.

7. N. Yang, H. Zhuang, R. Hoffmann, W. Smirnov, J. Hees, X. Jiang, C.E. Nebel. Electrochemistry of Nanocrystalline 3C Silicon Carbide Films. Chemistry - A European Journal (2012), Vol. 18, Issue 21, pp. 6514-6519.

8. Lebedev A.A. Evergreen semiconductor. Chemistry and Life, # 4, 2006, pp. 14-19.

9. F. Shariatmadar Tehrani, M.R. Badaruddin, R.G. Rahbari, M.R. Muhamad, S.A. Rahman. Low-pressure synthesis and characterization of multiphase SiC by HWCVD using CH4/SiH4. Vacuum, Vol. 86, 2012, pp. 1150-1154.

10. Okui Y., Jacob C., Ohshima S., Nishino, S. Selective epitaxial growth of pyramidal 3C-SiC on patterned Si substrate. Silicon carbide and related materials 2001, pts 1 and 2, proceedings, 2002, MATERIALS SCIENCE FORUM, Vol. 389-3, pp. 331-334.

11. S. Nishino, J.A. Powell and H.A. Will. Production of large-area single-crystal wafers of cubic SiC for semiconductor devices. Appl. Phys. Lett., 1983, Vol. 42, pp. 460.

12. J.-S. Hyun, S.-H. Nam, B.-C. Kang, J.-H. Park, and J.-H. Boo. Growth of 3C-SiC nanowires on nickel coated Si (100) substrate using dichloromethylvinylsilane and diethylmethylsilane by MOCVD method. J. of Nanoscience and Nanotechnology, 2008, Vol. 8, 5581-5585.

13. Y.M. Lei, Y.H. Yu, L.L. Cheng, C.X. Ren, S.C. Zou. Auger electron spectroscopy study of SiC thin films deposited on silicon. Vacuum, Vol. 58, 2000, pp. 602-608.

Downloads

Published

2013-01-15

How to Cite

Beisenov, R. E., Ebrahim, R., Mansurov, Z. A., Tokmoldin, S. T., Mansurov, B. Z., & Ignatiev, A. (2013). Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD. Eurasian Chemico-Technological Journal, 15(1), 25–29. https://doi.org/10.18321/ectj136

Issue

Vol. 15 No. 1 (2013)

Section

Articles

License

You are free to: Share — copy and redistribute the material in any medium or format. Adapt — remix, transform, and build upon the material for any purpose, even commercially.

Eurasian Chemico-Technological Journal applies a Creative Commons Attribution 4.0 International License to articles and other works we publish.

Subject to the acceptance of the Article for publication in the Eurasian Chemico-Technological Journal, the Author(s) agrees to grant Eurasian Chemico-Technological Journal permission to publish the unpublished and original Article and all associated supplemental material under the Creative Commons Attribution 4.0 International license (CC BY 4.0).

Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Most read articles by the same author(s)

1 2 3 4 5 6 > >>