Formation of Silicon Carbide Whiskers from Organic Precursors Via Sol-Gel Method

  • S. Manocha Department of Materials Science, Sardar Patel University, Vallabh Vidyanagar, Gujarat – 388120, India
  • A. Darji Department of Materials Science, Sardar Patel University, Vallabh Vidyanagar, Gujarat – 388120, India
  • L. M. Manocha Department of Materials Science, Sardar Patel University, Vallabh Vidyanagar, Gujarat – 388120, India

Abstract

Silicon Carbide (SiC) was synthesized by carbothermal reduction of silica precursor and carbon precursor. The silica precursor was obtained from tetraethoxysilane. Sucrose was used as carbon source. Tetraethoxysilane (TEOS) was hydrolyzed in acidic water (pH = 2). The molar ratio of TEOS-H2O-EtOH was taken as 1:8:2 in the sol-gel processing. Hydrolysed silica sol was polymerized with sucrose to incorporate carbon precursor into the silica network. The gel thus obtained was dried in an oven at 70 oC and at 100 oC. The solid mass obtained on drying was heat treated at 1000 °C in nitrogen atmosphere to obtain the black glass. It was characterized by FTIR, SEM and TGA. The black glass was further heated to 1500 oC in argon to yield silicon carbide. this resulted in formation of β-SiC whiskers.

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Published
2011-04-22
How to Cite
[1]
S. Manocha, A. Darji, and L. Manocha, “Formation of Silicon Carbide Whiskers from Organic Precursors Via Sol-Gel Method”, Eurasian Chem.-Technol. J., vol. 13, no. 1-2, pp. 27-33, Apr. 2011.
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Articles