Electric Properties of Organic-on-Inorganic n-Si/VOPc Heterojunction

Authors

  • Kh. S. Karimov Physical Technical Institute, Aini St. 299/1, Dushanbe, 734063, Tajikistan
  • B. F. Irgaziev GIK Institute of Engineering Sciences and Technology, Topi 23640, NWFP, Pakistan
  • M. Mahroof-Tahir St.Cloud State University, 720 Fourth Avenue South St.Cloud ,MN 56301-4498 ,USA
  • I. Qazi GIK Institute of Engineering Sciences and Technology, Topi 23640, NWFP, Pakistan
  • I. Murtaza State Technical University, Dushanbe, 734000, Tajikistan
  • Z. M. Karieva State Technical University, Dushanbe, 734000, Tajikistan
  • H. B. Senin 5 University College of Science and Technology Malaysia, Mengabang Telipot, 21030 Kuala Terengganu, Terengganu Malaysia

DOI:

https://doi.org/10.18321/ectj304

Abstract

In the current study vanadyl-phthalocyanine (VOPc) thin films were deposited by vacuum evaporation on n-Si substrate resulting in an organic-on-inorganic (n-Si/VOPc) heterojunctions. Ag films were deposited as electrodes. Thicknesses of the VOPc films were in the range of 100-300 nm. The dark I-V characteristics exhibited rectification behavior. The rectification ratio (RR) decreased from 4 to 0.4 as the thickness of the VOPc film decreased. The dark I-V characteristics were simulated by modified Schokley equation and spaace-charge limited currents (SCLC) approach. Investigations were carried out to study the effect of VOPc films thickness on reverse saturation current , diode quality factor and mobility of charge carriers.

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Published

2009-04-20

How to Cite

Karimov, K. S., Irgaziev, B. F., Mahroof-Tahir, M., Qazi, I., Murtaza, I., Karieva, Z. M., & Senin, H. B. (2009). Electric Properties of Organic-on-Inorganic n-Si/VOPc Heterojunction. Eurasian Chemico-Technological Journal, 11(2), 115–119. https://doi.org/10.18321/ectj304

Issue

Vol. 11 No. 2 (2009)

Section

Articles

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