On Physical Vapor Deposition of Organic Semiconductor CuPc Thin Films in High Gravity

Kh.S. Karimov; S. Bellingeri; B.F. Irgaziev; H.B. Senin; I. Qazi; T.A. Khan; Y. Abe; U. Shafique

doi:10.18321/ectj435

Authors

Kh.S. Karimov Physical Technical Institute of Academy of Sciences, Rudaki Ave.33, Dushanbe, 734025, Tajikistan
S. Bellingeri Energy Technology Research Institute, AIST, Tsukuba, Ibaraki 305-8568, Japan
B.F. Irgaziev GIK Institute of Engineering Science and Technology, Topi, Swabi, N.W.F.P, Pakistan, 23640
H.B. Senin University College of Science and Technology Malaysia, Mengabang Telipot, 21030 Kuala Terengganu, Malaysia
I. Qazi GIK Institute of Engineering Science and Technology, Topi, Swabi, N.W.F.P, Pakistan, 23640
T.A. Khan University College of Science and Technology Malaysia, Mengabang Telipot, 21030 Kuala Terengganu, Malaysia
Y. Abe Energy Technology Research Institute, AIST, Tsukuba, Ibaraki 305-8568, Japan
U. Shafique GIK Institute of Engineering Science and Technology, Topi, Swabi, N.W.F.P, Pakistan, 23640

DOI:

https://doi.org/10.18321/ectj435

Abstract

Thin organic films of p-type semiconductor copper phthalocyanine (CuPc, C₃₂H₁₆N₈Cu) deposited by vacuum evaporation on glass substrates at different gravity conditions, from 50 g to –50 g (g – denotes the terrestrial gravity acceleration) in a centrifugal machine, were investigated. Thickness distribution of the film deposited was determined by measurement of absorbance using a scanning light beam probe. An anisotropic distribution of the film was observed in the direction of source and substrate rotation. The anisotropy is associated with centrifugal motion of the source-substrate system. In a direction perpendicular to the rotation, the deposition distribution was isotropic and obeyed, in principle, the theoretical approach which requires a maximum deposition in the centre of the sample. The experimentally observed influence of the acceleration on the deposition rate of the CuPc films on the substrate was simulated.

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