Electrical Properties of Organic Semiconductor Orange Nitrogen Dye Thin Films Deposited from Solution at High Gravity

Authors

  • Kh.S. Karimov Physical Technical Institute of Academy of Sciences, Rudaki Ave. 33, Dushanbe, 734025, Tajikistan
  • M.M. Ahmed GIK Institute of Engineering Sciences and Technology, Topi, Swabi, N.W.F.P., Pakistan, 23460
  • S.A. Moiz GIK Institute of Engineering Sciences and Technology, Topi, Swabi, N.W.F.P., Pakistan, 23460
  • P. Babadzhanov Physical Technical Institute of Academy of Sciences, Rudaki Ave. 33, Dushanbe, 734025, Tajikistan
  • R. Marupov GIK Institute of Engineering Sciences and Technology, Topi, Swabi, N.W.F.P., Pakistan, 23460
  • M.A. Turaeva Physical Technical Institute of Academy of Sciences, Rudaki Ave. 33, Dushanbe, 734025, Tajikistan

DOI:

https://doi.org/10.18321/ectj297

Abstract

In this study the electrical properties of organic semiconductor orange nitrogen dye (OND) have been
examined. Thin film samples were deposited from OND solution in water on a nickel substrate (it was the
first electrode) at room temperature at different gravity conditions including, 1 g (reference samples), 123 g, 277 g and 1107 g by a centrifugal machine. As a second electrode of the samples a gallium drop was used. The voltage-current characteristics of the samples were measured at temperature interval of 30 °C
60 °C. It was found that all voltage-current characteristics were asymmetrical with slightly rectification behavior. The resistances of the samples decrease monotonously with temperature but with acceleration they show minimum around of 123 g. As a rule the forward bias resistance (+ voltage was applied to gallium) were less than reverse bias ones (+ voltage was applied to nickel). The electric behavior of the samples analyzed by the conception of space-charge limited currents (SCLC) at the presence of two different kinds of metallic electrodes (Ni and Ga) in the samples.

References

(1). Gutman. F, Lyons L.E.. Organic semiconductors, Part A, Krieger Robert E. Publishing Company, Malabar, Florida, U.S.A, 1981, p. 125.

(2). Gutman. F, Keyzer H, Lyons L.E, Somoano R.B. Organic semiconductors, Part B, Krieger Robert E. Publishing Company, Malabar, Florida, U.S.A , 1983, p. 125.

(3). Akhmedov Kh. M, Karimov Kh. S, Fiodorov M. I., Geliotekhnika, 1-3:178 (1995).

(4). Fiodorov M. I, Akhmedov Kh. M, Karimov Kh. S. Organic Solar Cells, Tajik NIINTI, Dushanbe, Tajikistan, 1989, p. 14.

(5). Kh.S. Karimov, Kh.M. Akhmedov, A.M. Achourov, in L.L. Regel and W.R. Wilcox (ed.), Centrifugal materials processing, Plenum Press, New York, U.S.A, 1997, p. 257.

(6). Kh. Karimov, Kh. Akhmedov, M. Mahroof-Tahir, R.M. Gul, A. Ashurov, in L.L. Regel and Wilcox (ed.), Processing by centrifugation, Kluwer Academic/Plenum Publishers, New York, U.S.A, 2001, p. 93.

(7). Kh. Karimov, S. Bellingeri, Y. Abe, in L.L.Regel and W.R.Wilcox (ed.), Processing by centrifugation, Kluwer Academic/Plenum Publishers, New York, U.S.A, 2001, p. 99.

(8). Fu-Ren Fan, Faulkner L.R., J.Chem.Phys. 69: 3341 (1978).

(9). Yamashita K, Suzuki T, Hino T., Jap. J.Applied Physics, 21:1506 (1982).

(10). Rudiono, Okazaki S., Takeuchi M., Thin Solid Films, 334:187 (1998).

(11). Karimov Kh.S, Akhmedov Kh.M, Marupov R., Valiev J, Homidov I, Turaeva M.A, Mahroof-Tahir M, Gul R., Proceedings of Tajikistan Academy of Sciences, 9-10:73 (2001).

(12). L.I. Maissel, in L.I. Maissel and R. Glang (ed.), Handbook of Thin Film Technology, McGraw Hill Hook Company, New York, 1970, p.101.

(13). Adir Bar-Lev, Semiconductors and electronic devices, 2nd Edition, Prentice-Hall International, U.S.A., 1984, p. 113.

(14). Mikayama T, Matsuoka H, Uehara K, Sugimoto A, Mizuno K, Inoue N., Trans.IEE of Japan, 118:1435 (1998).

Downloads

Published

2003-04-15

How to Cite

Karimov, K., Ahmed, M., Moiz, S., Babadzhanov, P., Marupov, R., & Turaeva, M. (2003). Electrical Properties of Organic Semiconductor Orange Nitrogen Dye Thin Films Deposited from Solution at High Gravity. Eurasian Chemico-Technological Journal, 5(2), 109–113. https://doi.org/10.18321/ectj297

Issue

Vol. 5 No. 2 (2003)

Section

Articles

License

You are free to: Share — copy and redistribute the material in any medium or format. Adapt — remix, transform, and build upon the material for any purpose, even commercially.

Eurasian Chemico-Technological Journal applies a Creative Commons Attribution 4.0 International License to articles and other works we publish.

Subject to the acceptance of the Article for publication in the Eurasian Chemico-Technological Journal, the Author(s) agrees to grant Eurasian Chemico-Technological Journal permission to publish the unpublished and original Article and all associated supplemental material under the Creative Commons Attribution 4.0 International license (CC BY 4.0).

Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Most read articles by the same author(s)