Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

Authors

  • O. Prikhodko Kazakh National University named al-Farabi, Physics Department, Almaty, Kazakhstan
  • N. Almasov Kazakh National University named al-Farabi, Physics Department, Almaty, Kazakhstan
  • N. Korobova Kazakh National University named al-Farabi, Physics Department, Almaty, Kazakhstan
  • S. Duysembaev Kazakh National University named al-Farabi, Physics Department, Almaty, Kazakhstan
  • K. Turmanova Kazakh National University named al-Farabi, Physics Department, Almaty, Kazakhstan
  • K. Tsendin Physical-Technical Institute named A.F. Ioffe, Saint-Petersburg, Russia

DOI:

https://doi.org/10.18321/ectj56

Abstract

The absence of deep traps for electrons in the spectrum of As40Se30S30 localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As40Se30S30 films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

References

1. Mott and E.A. Davis. Electronic Processes in Non- Crystalline substance. Moscow: Mir,1982, 560 p.

2. Amorphous Semiconductors , Ed. Brodsky M. - Moscow: Mir, 1982, 320 p.

3. Electronic phenomena in chalcogenide glassy semiconductors, Ed. Tsendin K.D. Moscow: Science 1996, 486 p.

4. Scher H., Montroll E. W. Anomalous transittime dispersion in amorphous solids, Phys. Rev. 12(6):2455 (1975).

5. Lebedev E., Kozakova L. Drift charge carriers in chalcogenide glasses // in Electronic phenomena in chalcogenide glassy semiconductors, Ed. Tsendin K.D. Moscow: Science 1996, 486 p.

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Published

2010-11-15

How to Cite

Prikhodko, O., Almasov, N., Korobova, N., Duysembaev, S., Turmanova, K., & Tsendin, K. (2010). Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films. Eurasian Chemico-Technological Journal, 12(3-4), 279–283. https://doi.org/10.18321/ectj56

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