Photoelectric Properties in Amorphous Chalcogenide Glassy Semiconductor As40Se30S30 Films

Authors

  • O. Prikhodko Kazakh National University named al-Farabi, Physics Department., Almaty, Kazakhstan
  • N. Almasov Kazakh National University named al-Farabi, Physics Department., Almaty, Kazakhstan
  • N. Korobova Kazakh National University named al-Farabi, Physics Department., Almaty, Kazakhstan
  • S. Duysembaev Kazakh National University named al-Farabi, Physics Department., Almaty, Kazakhstan
  • K. Turmanova Kazakh National University named al-Farabi, Physics Department., Almaty, Kazakhstan
  • K. Tsendin Physical-Technical Institute named A.F. Ioffe, Saint-Petersburg, Russia

DOI:

https://doi.org/10.18321/ectj212

Abstract

Bipolar photoconductivity and bipolar drift of charge carriers have been established in amorphous chalcogenide glassy semiconductors As40Se30S30 films, obtained by ion-plasma rf sputtering, in contrast to the films of these materials obtained by thermal evaporation. Observed results were due to the lack of deep traps for electrons in the spectrum of localized film states obtained by ion sputtering.

References

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Published

2010-11-15

How to Cite

Prikhodko, O., Almasov, N., Korobova, N., Duysembaev, S., Turmanova, K., & Tsendin, K. (2010). Photoelectric Properties in Amorphous Chalcogenide Glassy Semiconductor As40Se30S30 Films. Eurasian Chemico-Technological Journal, 12(3-4), 285–290. https://doi.org/10.18321/ectj212

Issue

Vol. 12 No. 3-4 (2010)

Section

Articles

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