Photoelectric Properties in Amorphous Chalcogenide Glassy Semiconductor As40Se30S30 Films

O. Prikhodko; N. Almasov; N. Korobova; S. Duysembaev; K. Turmanova; K. Tsendin

doi:10.18321/ectj212

Authors

O. Prikhodko Kazakh National University named al-Farabi, Physics Department., Almaty, Kazakhstan
N. Almasov Kazakh National University named al-Farabi, Physics Department., Almaty, Kazakhstan
N. Korobova Kazakh National University named al-Farabi, Physics Department., Almaty, Kazakhstan
S. Duysembaev Kazakh National University named al-Farabi, Physics Department., Almaty, Kazakhstan
K. Turmanova Kazakh National University named al-Farabi, Physics Department., Almaty, Kazakhstan
K. Tsendin Physical-Technical Institute named A.F. Ioffe, Saint-Petersburg, Russia

DOI:

https://doi.org/10.18321/ectj212

Abstract

Bipolar photoconductivity and bipolar drift of charge carriers have been established in amorphous chalcogenide glassy semiconductors As₄₀Se₃₀S₃₀ films, obtained by ion-plasma rf sputtering, in contrast to the films of these materials obtained by thermal evaporation. Observed results were due to the lack of deep traps for electrons in the spectrum of localized film states obtained by ion sputtering.

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