Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

O. Prikhodko; N. Almasov; N. Korobova; S. Duysembaev; K. Turmanova; K. Tsendin

doi:10.18321/ectj56

Authors

O. Prikhodko Kazakh National University named al-Farabi, Physics Department, Almaty, Kazakhstan
N. Almasov Kazakh National University named al-Farabi, Physics Department, Almaty, Kazakhstan
N. Korobova Kazakh National University named al-Farabi, Physics Department, Almaty, Kazakhstan
S. Duysembaev Kazakh National University named al-Farabi, Physics Department, Almaty, Kazakhstan
K. Turmanova Kazakh National University named al-Farabi, Physics Department, Almaty, Kazakhstan
K. Tsendin Physical-Technical Institute named A.F. Ioffe, Saint-Petersburg, Russia

DOI:

https://doi.org/10.18321/ectj56

Abstract

The absence of deep traps for electrons in the spectrum of As₄₀Se₃₀S₃₀ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As₄₀Se₃₀S₃₀ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

References

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