The Photo-Electrical Behavior of n-Si and p-Si/Orange Dye/ Conductive Glass Cells

Authors

  • M. H. Sayyad GIK Institute of Engineering Sciences and Technology, To pi, 23460, N.W.F.P., Pakistan
  • Kh. S. Karimov Physical Technical Institute of Academy of Sciences, Dushanbe, 734025, Tajikistan
  • A. Ellahi GIK Institute of Engineering Sciences and Technology, To pi, 23460, N.W.F.P., Pakistan
  • S. A. Moiz GIK Institute of Engineering Sciences and Technology, To pi, 23460, N.W.F.P., Pakistan
  • Z. M. Karieva Tajik Technical University, Dushanbe, 734000, Tajikistan
  • M.A. Turaeva Physical Technical Institute of Academy of Sciences, Dushanbe, 734025, Tajikistan
  • Kh. Zakaullah GIK Institute of Engineering Sciences and Technology, To pi, 23460, N.W.F.P., Pakistan

DOI:

https://doi.org/10.18321/ectj624

Abstract

The photo-electrical behavior of n-Si/orange dye/conductive glass and p-Si/orange dye/conductive glass sandwich type cells were investigated. In these cells crystal silicon of n-type and p-type and conductive glass (CG) electrodes were employed and the aqueous solution of organic dye (OD) was used as an electrolyte in the distilled water. Under filament lamp illumination, photo-induced open-circuit voltage and shortcircuit current exponentially dropped with time for the n-Si/orange dye/CG cell. In the p-Si/orange dye/CG cell, the photovoltaic effect was not observed. The n-Si/OD/CG cell showed high photo-electrical response under illumination. In the light-voltage/current conversion, these cells behaved as a differentiator and exhibited charge-storage properties.

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Published

2005-04-20

How to Cite

Sayyad, M. H., Karimov, K. S., Ellahi, A., Moiz, S. A., Karieva, Z. M., Turaeva, M., & Zakaullah, K. (2005). The Photo-Electrical Behavior of n-Si and p-Si/Orange Dye/ Conductive Glass Cells. Eurasian Chemico-Technological Journal, 7(2), 133–137. https://doi.org/10.18321/ectj624

Issue

Vol. 7 No. 2 (2005)

Section

Articles

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