AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD

Authors

  • R. E. Beisenov The Institute of Combustion Problems, 050012 Almaty, 172 Bogenbay Batyr st., Kazakhstan
  • R. Ebrahim Center for Advanced Materials, University of Houston, 4800 Calhoun Rd, Houston, TX 77004, USA
  • A. Zommorodian Center for Advanced Materials, University of Houston, 4800 Calhoun Rd, Houston, TX 77004, USA
  • Z. A. Mansurov The Institute of Combustion Problems, 050012 Almaty, 172 Bogenbay Batyr st., Kazakhstan
  • S. Zh. Tokmoldin Institute of Physics and Technology, 050032 Almaty, Ibragimov st. 11, Kazakhstan
  • A. Ignatiev Center for Advanced Materials, University of Houston, 4800 Calhoun Rd, Houston, TX 77004, USA

DOI:

https://doi.org/10.18321/ectj230

Abstract

Auger electron spectroscopy (AES) has been used to investigate the chemical composition of the heteroepitaxial silicon carbide films grown on Si (100) and sapphire (0001) substrates at 900 °C by the MOCVD technique using DEMS precursor. Auger spectra were obtained from the surface and as a function of depth of 2 micron thick SiC films. AES measurements were performed under very high vacuum 10-9 Torr conditions. Surface cleaning and depth profile studies were carried out by using Ar+ ion beam sputtering. Auger spectra of the surface indicate Si LVV, C KLL and O KLL peaks. The Si LVV signals on the ‘as prepared’ surfaces for both substrates indicated that the silicon was in the oxide state, which was removed after 15 min Ar+ ion cleaning. Depth profile studies showed, that after 20 min of ion cleaning the SiC films possess near stoichiometric composition. Moreover, the C KLL signal on the ion cleaned films showed the carbon in the carbide state. X-ray diffraction analysis of the SiC films on the sapphire (0001) and Si(100) substrates has shown a high intensity single peaks at 35.7º, which indicates the presence of SiC at orientation (111).

References

1. Houyem Abderrazak and Emna Selmane Bel Hadj Hmida, Silicon Carbide: Synthesis and Properties, Properties and Applications of Silicon Carbide, edited by Prof. Rosario Gerhardt, ISBN: 978-953-307-201-2, 2011, pp. 361-388.

2. Masri P., Silicon carbide and silicon carbidebased structures,the physics of epitaxy, Surface Science Reports 48 (2002), pp. 1–51.

3. J. A. Cooper, Jr., Silicon Carbide, edited by W. J. Choyke H. Matsunami, and G. Pensl (Akademie, Berlin, 1997), Vol. II, p. 305.

4. Matus L.G., Institute of Physics Conference Series No 137, 1993, p. 185–188.

5. Nianjun Yang, Hao Zhuang, Ren Hoffmann Chem. «Electrochemistry of Nanocrystalline 3C Silicon Carbide Films» Eur. J. (2012), 18, 6514 – 6519.

6. L. Muehihoff, W.J. Choyke, M.J. Bozack, and John T. Yates Jr. “Comparative electron spectroscopic
studies of surface segregation on SiC (0001), J. Appl. Phys., Vol. 60. No. 8, pp. 2842-2853, 1986.

7. Chan, King-lung “A study of geometrical properties of SiC and GaN surfaces by auger electron spectroscopy”, Thesis work, The University of Hong Kong, 2002, URL http://hdl.handle. net/10722/39037.

8. Y.M. Lei, Y.H. Yu, L.L. Cheng, C.X. Ren, S.C. Zou, “Auger electron spectroscopy study of SiC thin films deposited on silicon”, Vacuum 58, (2000), pp. 602-608.

9. J. Pezoldt, B. Stottko, G. Kupris, G. Ecke “Sputtering effects in hexagonal silicon carbide” Materials Science and Engineering: B, Volume 29, Issues 1–3, January 1995, pp 94–98.

10. R. Beisenov, R. Ebrahim, Z. A. Mansurov, S. Zh. Tokmoldin, B. Z. Mansurov, and A. Ignatiev “Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD” Eurasian chemico-technological journal, Volume 15, No. 1, pp 25-30, 2013.

11. A.I. Andreev, M.M. Anikin, A.L. Sirkin, V.E. Chelnokov “Silicon carbide surface treatment technique under the high vacuum PHYSICS AND TECHNICS OF SEMICONDUCTORS Vol. 28, N 6 pp 998-1002, 1994.

12. Davis, L. E., N. C MacDonald, et al. (1976). “Handbook of Auger Electron Spectroscopy (2nd edition).” Physical Electronics Industries.

13. Kazuhisa Miyoshi, Donald H. Buckley “Changes in surface chemistry of silicon carbide (0001) surface with temperature and their effect on friction” NASA Technical Paper 1756, 1980.

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Published

2013-07-25

How to Cite

Beisenov, R. E., Ebrahim, R., Zommorodian, A., Mansurov, Z. A., Tokmoldin, S. Z., & Ignatiev, A. (2013). AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD. Eurasian Chemico-Technological Journal, 15(3), 259–263. https://doi.org/10.18321/ectj230

Issue

Vol. 15 No. 3 (2013)

Section

Articles

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