AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD

Authors

  • R. E. Beisenov The Institute of Combustion Problems, 050012 Almaty, 172 Bogenbay Batyr st., Kazakhstan
  • R. Ebrahim Center for Advanced Materials, University of Houston, 4800 Calhoun Rd, Houston, TX 77004, USA
  • A. Zommorodian Center for Advanced Materials, University of Houston, 4800 Calhoun Rd, Houston, TX 77004, USA
  • Z. A. Mansurov The Institute of Combustion Problems, 050012 Almaty, 172 Bogenbay Batyr st., Kazakhstan
  • S. Zh. Tokmoldin Institute of Physics and Technology, 050032 Almaty, Ibragimov st. 11, Kazakhstan
  • A. Ignatiev Center for Advanced Materials, University of Houston, 4800 Calhoun Rd, Houston, TX 77004, USA

DOI:

https://doi.org/10.18321/ectj230

Abstract

Auger electron spectroscopy (AES) has been used to investigate the chemical composition of the heteroepitaxial silicon carbide films grown on Si (100) and sapphire (0001) substrates at 900 °C by the MOCVD technique using DEMS precursor. Auger spectra were obtained from the surface and as a function of depth of 2 micron thick SiC films. AES measurements were performed under very high vacuum 10-9 Torr conditions. Surface cleaning and depth profile studies were carried out by using Ar+ ion beam sputtering. Auger spectra of the surface indicate Si LVV, C KLL and O KLL peaks. The Si LVV signals on the ‘as prepared’ surfaces for both substrates indicated that the silicon was in the oxide state, which was removed after 15 min Ar+ ion cleaning. Depth profile studies showed, that after 20 min of ion cleaning the SiC films possess near stoichiometric composition. Moreover, the C KLL signal on the ion cleaned films showed the carbon in the carbide state. X-ray diffraction analysis of the SiC films on the sapphire (0001) and Si(100) substrates has shown a high intensity single peaks at 35.7º, which indicates the presence of SiC at orientation (111).

References

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Published

2013-07-25

How to Cite

Beisenov, R. E., Ebrahim, R., Zommorodian, A., Mansurov, Z. A., Tokmoldin, S. Z., & Ignatiev, A. (2013). AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD. Eurasian Chemico-Technological Journal, 15(3), 259–263. https://doi.org/10.18321/ectj230

Issue

Vol. 15 No. 3 (2013)

Section

Articles

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